Комментарии:
Nice for my interview next week 😅
Ответитьcan we simulate this effect?
Ответитьnice one👏
ОтветитьHow does effect is only on sides? It can be on all sides also?
ОтветитьThank you. It was impeccable.
ОтветитьThanks naba, never forget WPE in my life
ОтветитьFor which layer are we doing ion implantation
ОтветитьThank you sir. Very useful
ОтветитьIs WPE also will effect NMOSES if it places near to WELL ?
ОтветитьHi sir,
How Vt will change -10% based on scattered ions can you please explain
can you please upload videos on internal structure of end cap cells,tap cells, decap cells
ОтветитьSir plzzz upload more related to layout sire
Ответитьif photoresistor is scattering my ions then why we will not remove that before ion implantation? basically below that one oxide layer is present to select particular area for ion implantation
ОтветитьSuper explanation sir
Ответитьnicely explained ...thanks
Ответитьsir make a video on ESD
ОтветитьReally it's helpful for me thank you 😊
ОтветитьCan you please tell me in detailed how the scattered ions are affecting the nearby device in terms of charge carries.
ОтветитьWILL THE Vth OF MY MOSFET DEPENDS ON TRANSISTOR WIDTH AND LENGTH?
Ответитьexplain in cross section view ........
Ответитьhi sir if you don't mind can you please explain deep nwell process also
ОтветитьPlease add and explain some more concepts, very helpful source
ОтветитьCan you please explain in detail how VT of the transistor varies?
ОтветитьHi . You said ion implantation done with 7 degree angle.. then both edges will effect.. but if we done with 90 degrees then there is no chance to hit the edges then there is no chance to WPE? WHY we not do with 90 degrees ion implantation? If do what happened?
ОтветитьCan u pls list the second order effects? Whether we have 1st order too in analog layout?
Ответитьsir will u plz upload SHALLOW TRENCH ISOLATION AND DEEP N-WELL
Ответитьnice ....thank you.... want video on short channel effects
ОтветитьPlz upload video on electro static discharge
ОтветитьHi... if you observe the diagram you are doing ion implantation with an angle right, in that scenario the transistor which are placed left corner side only affected.. how will the right corner transistor affected?
Ответитьcmos fabracation vanum sir
ОтветитьThank you bro...Its in need for all guys who r really preparing for interview and also working guys will be not knowing about the concept's.
Ответитьits vary the vt of the n mos or not
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